Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-10-12
1997-02-25
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 66, 257 69, 257 70, 257 72, 257 75, H01L 2904
Patent
active
056061790
ABSTRACT:
Method of fabricating edgeless staggered type thin-film transistors (TFTs) substantially without producing steps on gate electrodes. This method is effective in reducing parasitic capacitance and isolating transistors from each other. A catalyst element such as nickel is added to regions corresponding to source/drain regions of TFTs, or a layer of the catalyst element or a layer of a compound of the catalyst element is formed. An intrinsic amorphous silicon film is formed either on the regions or on the layer of the catalyst element or its compound. The laminate is thermally annealed to diffuse the catalyst element into the amorphous silicon film. The amorphous silicon film is selectively crystallized around the source/drain regions. As a result, high-resistivity regions are produced in the other regions. No channel is created. The TFTs can be isolated from each other.
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Takemura Yasuhiko
Yamazaki Shunpei
Blanche Bradley L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minhloan
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