Insulated-gate field effect transistor and method for driving th

Details Insulated-gate field effect transistor and method for driving th Insulated-gate field effect transistor and method for driving th

1998-02-06

1999-10-19

Callahan, Tim

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327390, 327434, H03K 301

Patent

active

059695641

ABSTRACT:
An insulated-gate field effect transistor comprising a channel forming region, source/drain regions, a gate region, a bias supplying means, and a capacitive element, wherein a potential for controlling a gate threshold voltage of the insulated-gate field effect transistor in an off-state thereof is applied to the channel forming region through the bias supplying means, and a signal having approximately the same phase as a phase of a signal supplied to the gate region is supplied to the channel forming region through the capacitive element.

REFERENCES:
patent: 5514994 (1996-05-01), Sawada
patent: 5543650 (1996-08-01), Au et al.
patent: 5729165 (1998-03-01), Lou et al.
patent: 5828262 (1998-10-01), Rees

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