Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1993-04-30
1994-05-17
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 57, 257 60, 257773, 257774, 257914, H01L 4500, H01L 2900
Patent
active
053130774
ABSTRACT:
A thin film transistor including a semiconductor layer including a non-single crystalline silicon layer formed on an insulating surface of a substrate; a gate electrode formed on the semiconductor layer; a gate insulating film disposed between the gate electrode and the semiconductor layer; a source region and a drain region formed in the semiconductor layer; a channel region extending between the source and drain regions in the semiconductor layer, where the source and drain regions have a different conductivity type from the channel region; and an interlayer insulating film covering at least the gate electrode and semiconductor layer except for a contact hole of at least one of the source and drain regions where the contact hole is disposed partially over the source or drain regions; wherein at least one of the source region and said drain region is provided with an electrode through the contact hole, the electrode being contacted with an upper surface of the substrate and an upper surface of one of the source region or the drain region.
REFERENCES:
patent: 3304469 (1967-02-01), Weimer
patent: 4072974 (1978-02-01), Ipri
patent: 4113514 (1978-09-01), Pankove
patent: 4196438 (1980-08-01), Carlson
patent: 4239554 (1980-12-01), Yamazaki
patent: 4272880 (1981-06-01), Pashley
patent: 4353085 (1982-10-01), Sakurai
patent: 4377902 (1983-03-01), Shinada et al.
patent: 4406709 (1983-09-01), Celler
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4463492 (1984-08-01), Maeguchi
patent: 4470060 (1984-09-01), Yamazaki
patent: 4476475 (1984-10-01), Naem et al.
patent: 4514895 (1985-05-01), Nishimura
patent: 4523368 (1985-06-01), Feist
patent: 4578304 (1986-06-01), Tanaka et al.
patent: 4619034 (1986-10-01), Janning
patent: 4667217 (1987-05-01), Janning
patent: 4727044 (1988-02-01), Yamazaki
patent: 4766477 (1988-08-01), Nakagawa et al.
patent: 4823180 (1989-04-01), Wieder et al.
patent: 4959700 (1990-09-01), Yamazaki
G. Yaron and L. D. Hess "Application of laser Annealing Techniques to Increase Channel Mobility in Silicon on Sapphire Transistors" Appl. Phys. Lett 36 (3), Feb. 1, 1980 pp. 220-222.
T. I. Kamins and P. A. Pianetta "MOSFETS in Laser-Recrystallized Poly-Silicon on Quarts" IEEE Elect. Dev. Lett. EDL-1, No. 10, Oct. 1980 pp. 214-216.
R. A. Lemons, et al. "Laser Crystallization of Si Films on Glass" Appl. Phys. Lett. vol. 40, No. 6, Mar. 15, 1982, pp. 469-471.
Semiconductor Energy Laboratory Co,. Ltd.
Wojciechowicz Edward
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