Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1992-12-08
1994-05-24
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257368, 257346, 257347, 257376, 257403, H01L 2904, H01L 2702, H01L 2910, H01L 2978
Patent
active
053151321
ABSTRACT:
An IGFET has a non-single crystalline semiconductor layer formed on an insulating surface of a substrate. In a first embodiment, the semiconductor layer is intrinsic n- or p- type and the concentration of oxygen, carbon, or nitrogen in the layer is not higher than 5.times.10.sup.18 atoms/cm.sup.3, source and drain regions are formed in the semiconductor layer by selectively doping with an n-type or p-type impurity and selectively crystallizing the doped portion, and a channel region between the source and drain includes a hydrogen or halogen element. In another embodiment, the semiconductor layer is doped with a dangling bond neutralizer and a P-, I, or N- type channel region is formed in the layer. and a part of the channel region near the source-channel and drain-channel boundaries is selectively crystallized. Alternatively, the source and drain regions may be selectively crystallized without crystallizing the source-channel and drain-channel boundaries. In another embodiment, a P-, I, or N microcrystalline or polycrystalline semiconductor layer contains hydrogen or fluorine, and source and drain regions contain hydrogen or a halogen and are covered by a gate insulating layer.
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James Andrew J.
Semiconductor Energy Laboratory Co,. Ltd.
Wallace Valencia M.
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