Insulated gate field effect transistor

Details Insulated gate field effect transistor Insulated gate field effect transistor

1996-07-30

1998-05-26

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257411, 257510, 257513, 257520, 257639, H01L 2976, H01L 2900, H01L 2358

Patent

active

057570590

ABSTRACT:
An FET isolated on either side by a trench. The FET has a dielectric layer in the isolating trench along at least one side. The dielectric layer which may be an ONO layer has an oxidation catalyst diffused into it. The oxidation catalyst may be potassium. A gate oxide along the side of the FET in close proximity to the ONO layer is thicker than gate oxide between both sides.

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