Insulated gate field effect transistor

Details Insulated gate field effect transistor Insulated gate field effect transistor

1980-03-10

1981-09-01

Wojciechowicz, Edward J.

357 4, 357 22, 357 49, 357 89, H01L 2972

Patent

active

042875269

ABSTRACT:
An insulated gate field effect transistor is disclosed. The transistor comprises an insulator body, a semi-conductor layer of one conductivity type formed on a surface of the insulator body, a pair of source and drain regions of the opposite conductivity type formed in the semi-conductor layer along its one major surface and an extension region of the opposite conductivity type extending from one of the source and drain regions towards the remaining of the source and drain regions. A first insulating film is formed on the entire surface of the extension region, a gate insulating film is formed on a channel region of the transistor and a gate electrode is formed on the gate insulating film.

REFERENCES:
patent: 3997908 (1976-12-01), Schloetterer et al.
patent: 4087902 (1978-05-01), Feltner

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