Insulated gate field effect transistor

Details Insulated gate field effect transistor Insulated gate field effect transistor

1977-04-22

1978-02-07

Wojciechowicz, Edward J.

357 41, 357 46, 357 55, H01L 2978, H01L 2702, H01L 2906

Patent

active

040729753

ABSTRACT:
An insulated gate field effect transistor is formed of a drain region of a first conductivity type which faces both of the major surfaces of a semiconductor substrate, a frame region of a second conductivity type which faces the one major surface of the semiconductor substrate, a base region of the second conductivity type which faces the one major surface and is connected to the frame region, a PN junction being formed between the base region and the drain region, and a source region of the first conductivity type which faces the one major surface and is formed in the base region as if being surrounded thereby.
The insulated gate field effect transistor is also provided with a source electrode which short-circuits the frame region and the source region, a drain electrode which is provided on the drain region facing the other major surface of the substrate, and a gate electrode which is provided on the base region facing the one major surface through a gate insulating layer.

REFERENCES:
patent: 4007478 (1977-02-01), Yagi

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