Insulated gate field effect transistor

Details Insulated gate field effect transistor Insulated gate field effect transistor

1988-10-14

1990-04-03

James, Andrew J.

357 238, 357 91, 357 231, H01L 2978

Patent

active

049144928

ABSTRACT:
An insulated gate field effect transistor, in which at least the drain region is surrounded by an impurity region of the same conductivity type as and a higher impurity concentration than the substrate, is disclosed. A portion of the impurity region under the drain region contains both of P-type and N-type impurities to form an abrupt profile therby depleting the portion with a depletion layer by the built-in potential.

REFERENCES:
patent: 4242691 (1980-12-01), Kotani
D. Hodges & M. Jackson, "Analysis & Design of Integrated Circuits", McGrawHill, New York, 1983, pp. 132-135.
S. SXE, "Physics of Semiconductor Devices", John Wiley and Sons, New York, 1981, p. 488.

Affiliated with

Also associated with

Rating

Insulated gate field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1361420