1985-10-15
1987-04-07
Edlow, Martin H.
357 234, 357 235, 357 238, H01L 2976, H01L 2978, H01L 2994
Patent
active
046564926
ABSTRACT:
An insulated gate field effect transistor is formed in one surface of a semiconductor substrate. The surface portion of a channel has an impurity distribution of the conduction type opposite to that of the substrate, which the deeper portion of the channel has an impurity distribution of the same conduction type as that of the substrate. Moreover, at least one of a source and a drain is formed of such an impurity layer of the conduction type opposite to that of the substrate as has its impurity distribution gently sloped by double diffusion processes.
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Kamigaki Yoshiaki
Masuda Hiroo
Shimohigashi Katsuhiro
Sunami Hideo
Takeda Eiji
Clark S. V.
Edlow Martin H.
Hitachi , Ltd.
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