Insulated gate field effect transistor

Details Insulated gate field effect transistor Insulated gate field effect transistor

1980-10-09

1983-07-19

Larkins, William D.

357 20, 357 41, 357 86, 357 89, H01L 2978

Patent

active

043946747

ABSTRACT:
Parasitic bipolar action is prevented in a high voltage MOSFET by a substrate contact region underlying the bottom of the source region and shorted to the source, to prevent forward bias of the source.

REFERENCES:
patent: 3821776 (1974-06-01), Hayashi et al.
patent: 4035826 (1977-07-01), Morton
patent: 4334235 (1982-06-01), Nishizawa

Affiliated with

Also associated with

Rating

Insulated gate field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-754086