Insulated-gate field effect transistor

Details Insulated-gate field effect transistor Insulated-gate field effect transistor

2007-10-31

2009-12-08

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S288000, C257SE29265

Reexamination Certificate

active

07629632

ABSTRACT:
In a heterostructure field effect transistor (MISHFET), a source ohmic electrode105and a drain ohmic electrode106are formed on an AlGaN barrier layer104.A SiNx gate insulator108,a p-type polycrystalline SiC layer109,and a Pt/Au gate electrode110being an ohmic electrode are formed one on another on the AlGaN barrier layer104.Since the p-type polycrystalline SiC layer109is relatively large in work function, the channel of the MISHFET is depleted even in its zero-bias state, so that the normally-OFF operation occurs.

REFERENCES:
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patent: 2006/0108606 (2006-05-01), Saxler et al.
patent: 2007/0228422 (2007-10-01), Suzuki et al.
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patent: 2002-324813 (2002-11-01), None
IEEE Electron Device Letters, vol. 24, No. 9, Sep. 2003, pp. 541-543.

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