Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-06-07
1996-08-06
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257368, 257346, 257347, 257376, 257403, H01L 2904, H01L 2702, H01L 2910, H01L 2978
Patent
active
055436366
ABSTRACT:
An insulated gate field effect transistor which may be of the thin film type including a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type. The semiconductor layer is disposed over a substrate including a channel region disposed in the semiconductor layer. Source and drain regions form respective junctions with the channel region where the channel region is disposed between the source and drain regions whereby charge carriers move through the channel region between the source and drain regions in a path substantially parallel to said substrate. A gate insulating film contacts the channel region and includes silicon and nitrogen. A gate electrode contacts the gate insulating film. At least a portion of the channel region contains at least one of oxygen, nitrogen, and carbon in an amount of not exceeding 5.times.10.sup.18 atoms/cm.sup.3.
REFERENCES:
patent: 3304469 (1967-02-01), Weimer
patent: 3999212 (1976-12-01), Usuda
patent: 4055884 (1977-11-01), Jambotkar
patent: 4072974 (1978-02-01), Ipri
patent: 4113514 (1978-09-01), Pankove
patent: 4196438 (1980-04-01), Carlson
patent: 4220483 (1980-09-01), Cazcarra
patent: 4239554 (1980-12-01), Yamazaki
patent: 4263057 (1981-04-01), Ipri
patent: 4272880 (1981-06-01), Pashley
patent: 4353085 (1982-10-01), Sakurai
patent: 4377902 (1983-03-01), Shinada et al.
patent: 4406709 (1983-09-01), Celler
patent: 4418132 (1983-11-01), Yamazaki
patent: 4420872 (1993-12-01), Solo de Zaldivar
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4460670 (1984-07-01), Ogawa
patent: 4463492 (1984-08-01), Maeguchi
patent: 4466171 (1984-08-01), Jochems
patent: 4468855 (1984-09-01), Sasaki
patent: 4470060 (1984-09-01), Yamazaki
patent: 4476475 (1984-10-01), Naem et al.
patent: 4514895 (1985-05-01), Nishimura
patent: 4523368 (1985-06-01), Feist
patent: 4529617 (1985-07-01), Chenevas-Paule et al.
patent: 4578304 (1986-05-01), Tanaka et al.
patent: 4591892 (1986-05-01), Yamazaki
patent: 4598304 (1986-07-01), Tanaka
patent: 4611220 (1986-09-01), MacIver
patent: 4619034 (1986-10-01), Janning
patent: 4667217 (1987-05-01), Janning
patent: 4690717 (1987-09-01), Yamazaki
patent: 4727044 (1988-02-01), Yamazaki
patent: 4766477 (1988-08-01), Nakagawa et al.
patent: 4769338 (1988-09-01), Ovshinsky et al.
patent: 4823180 (1989-04-01), Weider
patent: 4889782 (1989-12-01), Yamazaki
patent: 4889783 (1989-12-01), Yamazaki
patent: 4959700 (1990-09-01), Yamazaki
patent: 5094963 (1992-03-01), Hiraguchi et al.
patent: 5142344 (1992-08-01), Yamazaki
patent: 5315132 (1994-05-01), Yamazaki
Matsumura, Japanese Journal of Applied Physics, (Invited) "Amorphous Silicon Transistors and Integrated Circuits", 1983.
P. G. LeComber, Electronics Letters, "Amorphous-Silicon Field-Effect Device and Possible Application", Mar. 15, 1979.
K. Roy, IEEE Electron Device Letters 1980.
Philosophical Magazine, 1976, vol. 33, No. 6, 935-949 "Electronic Properties of Substantially Doped Amorphous Si and Ge", W. E. Spear et al., 1976.
Physics of Semiconductor Devices, pp. 568-621, S. M. Sze, 1969.
Applied Physics Letters, vol. 34, pp. 234-236, "Electronic Density of States in Discharge-Produced Amorphous Silicon", M. Hirose et al., Feb. 1, 1979.
Extended Abstracts (The 26th Spring Meeting) The Japan Society of Applied Physics and Related Societies, p. 326, Matsumura et al., Mar. 1979 (including partial translation).
Extended Abstracts (The 40th Autumn Meeting) The Japan Society of Applied Physics, p. 325, 30P-S-17, Nakamura et al., Sep. 1979.
Proceedings of the 10th Conference on Solid State Devices, JAP, vol. 18, pp. 109-113, "Determination of Localized State Density Distribution in Glow Discharge Amorphous Silicon", Hirose et al., 1979.
Extended Abstracts (The 40 Autumn Meeting) The Japan Society of Applied Physics, p. 326, 30P-S-18, Matsumura et al., 1979 (including partial translation).
A Journal of Theoretical Experimental and Applied Physics, "Localized States in the Mobility Gap of Amorphous Quartz and Glass", pp. 839-851, Anderson, 1974.
Physics of Semiconductor Devices, p. 32, S. M. Sze, 1981.
National Convention Record, The Institute of Electronics and Communication Engineers of Japan, 2-281-282, Matsumura et al., Mar. 1980 (including partial translation).
Proc. 7th Intern. Vac. Congr. & 34d Intern. Conf. Solid Surfaces, "Preparation and Reliability of Thin Film Transistors Based on CdSe", M. J. Lee, 1979.
Solid State Communications, vol. 17, No. 9, pp. 1193-1196, "Substitutional Doping of Amorphous Silicon", Spear et al., 1975.
National Convention Record, The Institute of Electronics and Communication Engineers of Japan, 2-287-288 Matsumura et al., Mar. 1980 (including partial translation).
The Transactions of The Institute of Electronics and Communication Engineers of Japan, vol. 363-C No. 2 pp. 128-129, "Amorphous Silicon Thin Film MOS Transistors", Matsumura et al., Feb. 1980.
National Convention Record, The Institute of Electronics and Communication Engineers of Japan, 2-285-286, Matsumura et al., Mar. 1980 (including partial translation).
Optoelectronics, vol. 4, No. 2, pp. 209-222, "Active Matrix Addressed Liquid Crystal Displays Using Amorphous Silicon Thin Film Transistors", Ibaraki et al., Dec. 1989.
Journal of Non Crystalline Solids 8-10, 727-738, "Investigation of the Localized State Distribution in Amorphous Si Films", Spear et al., v 1972.
Electronics Letters, vol. 15, No. 6, 179-181, "Amorphous-Silicon Field-Effect Device and Possible Application", Le Comber, Mar. 1979.
Extended Abstracts (The 26th Spring Meeting) The Japan Society of Applied Physics and Related Societies, p. 143, 27P-E-15, Suzuki et al., 1978 (including partial translation).
R. A. Lemons et al., "Laser Crystallization of Si Films on Glass", Appl. Phys., Lett. vol. 40, No. 6, Mar. 15, 1982, pp. 469-471.
C. C. Tsai, Journal of Non-Crystalline Solids, "Amorphous Si Prepared in a Uhv Plasma Deposition System", Dec. 1983.
G. Yaron & L. D. Hess, "Application of Laser annealing techniques to increase channel mobility in silicon on sapphire transistors", Appl. Phys. Letts. vol. 36, No. 6, 1 Feb. 1980, pp. 220-222.
T. I. Kamins, IEEE Electron Device Letters, "MOSFETs in Laser-Recrystallized Poly-Silicon on Quartz", Oct. 1980.
T. Unagami et al., "High-Voltage Silicon Thin Film Transistor", IEEE, Dev. Lett, vol. EOL-3, No. 6, Jun. 1982, pp. 167-168.
T. Stultz et al., "Beam Processing of Silicon with a Scanning CW Hg Lamp", Laser Solid Interaction and Transient Thermal Processing of Materials, Materials Research Society Symposia Proceedings, vol. 13 (1983), pp. 463-476.
Ghandi, "VLSI Fabrication Principle, Silicon & Gallium Arsenide", 1983, pp. 23-29.
C. Magee et al., "Investigations of the Hydrogen and Impurity Contents of Amorphous Silicon by Secondary Ion Mass Spectrometry", Solar Cells, vol. 2 (1980), pp. 365-376.
Crane Sara W.
Ferguson Jr. Gerald J.
Martin Wallace Valencia
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Insulated gate field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulated gate field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate field effect transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2192826