Insulated-gate field-effect transistor

Details Insulated-gate field-effect transistor Insulated-gate field-effect transistor

1976-09-07

1978-03-21

Wojciechowicz, Edward J.

357 41, 357 51, 357 68, 357 89, H01L 2978, H01L 2702, H01L 2348

Patent

active

040806189

ABSTRACT:
An insulated-gate field-effect transistor having improved high-speed operation characteristics and high channel controllability includes a source region having first and second diffused regions and a drain region having first and second diffused regions. The first diffused regions of both the source and drain regions are formed by diffusion of a first impurity having relatively low diffusion coefficient and the second diffused regions of both the source and drain regions are formed by diffusion of a second impurity having relatively high diffusion coefficient.

REFERENCES:
patent: 3959025 (1976-05-01), Polinsky
patent: 3986903 (1976-10-01), Watrous

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