Insulated gate field effect semiconductor devices having a LDD r

Details Insulated gate field effect semiconductor devices having a LDD r Insulated gate field effect semiconductor devices having a LDD r

1992-08-24

1994-05-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, 257351, 257408, 257410, H01L 2904, H01L 31036, H01L 2701, H01L 2976

Patent

active

053089987

ABSTRACT:
An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain regions. An oxide film may be provided to cover the surface of the gate electrode, formed by anodizing the surface of the gate electrode, and this layer may be used as a mask when forming the crystallinity offset regions.

REFERENCES:
patent: 3775262 (1973-11-01), Heyerdahl
patent: 5142344 (1992-08-01), Yamazaki et al.

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