Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-06-04
1999-09-28
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 66, 257351, 257408, 257410, H01L 2904, H01L 31036, H01L 2701, H01L 2976
Patent
active
RE0363146
ABSTRACT:
An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain regions. An oxide film may be provided to cover the surface of the gate electrode, formed by anodizing the surface of the gate electrode, and this layer may be used as a mask when forming the crystallinity offset regions.
REFERENCES:
patent: 3775262 (1973-11-01), Heyerdahl
patent: 4455737 (1984-06-01), Godejahn, Jr.
patent: 4468855 (1984-09-01), Sasaki
patent: 4557036 (1985-12-01), Kyuragi et al.
patent: 4646426 (1987-03-01), Sasaki
patent: 4727044 (1988-02-01), Yamazaki
patent: 4746628 (1988-05-01), Takafuji et al.
patent: 4769337 (1988-09-01), Ovshinsky et al.
patent: 4822751 (1989-04-01), Ishizu et al.
patent: 4868137 (1989-09-01), Kubota
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4905066 (1990-02-01), Dohjo et al.
patent: 5097311 (1992-03-01), Iwase et al.
patent: 5112764 (1992-05-01), Mitra et al.
patent: 5126283 (1992-06-01), Pintchovski et al.
patent: 5134093 (1992-07-01), Onishi et al.
patent: 5142344 (1992-08-01), Yamazaki et al.
patent: 5165075 (1992-11-01), Hiroki et al.
patent: 5258319 (1993-11-01), Inuishi et al.
patent: 5272361 (1993-12-01), Yamazaki
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5306651 (1994-04-01), Masumo et al.
Ghandhi, S., "VLSI Fabrication Principles," John Wiley & Sons, New York, 1983, pp. 401-411.
Patent Abstracts of Japan, Section E, Section No. 1060, vol. 15, No. 161, p. 128 (Apr. 23, 1991).
Wolf et al., Silicon Processing, Lattice Press, vol. 1, 1986, pp. 151-154.
Wolf, Silicon Processing, Lattice Press, 1990, vol. 2, pp. 66-72.
Takemura Yasuhiko
Yamazaki Shunpei
Zhang Hongyong
Loke Steven H.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Insulated gate field effect semiconductor devices having a LDD r does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulated gate field effect semiconductor devices having a LDD r, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate field effect semiconductor devices having a LDD r will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-690497