Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-06-06
1999-10-05
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 72, 257350, H01L 2976, H01L 2904, H01L 2701
Patent
active
059628707
ABSTRACT:
An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.
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Ghandi, S., VLSI Fabrication Principles, John Wiley & Sons, New York, 1983, pp. 401-411.
Takemura Yasuhiko
Yamazaki Shunpei
Zhang Hongyong
Fahmy Wael M.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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