Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-02-09
1997-04-22
Levy, Stuart S.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257366, 257270, H01L 2348, H01L 2352, H01L 2940, H01L 2976
Patent
active
056231652
ABSTRACT:
In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is in contact with a gate insulating film and is contained at a high concentration in the second semiconductor layer which is not in contact with the gate insulating film. Accordingly, By existence of the first semiconductor layer is which the impurity is not doped, the impurity is prevented from penetrating through the gate insulating film from the gate electrode and diffusing into the channel forming region. Also, by existence of the second semiconductor layer in which high concentration impurity is doped, the gate electrode has low resistance.
REFERENCES:
patent: 5021849 (1991-06-01), Pfiester et al.
patent: 5237196 (1993-08-01), Mikata et al.
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Giordana Adriana
Levy Stuart S.
Semiconductor Energy Laboratory Co,. Ltd.
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