Insulated gate field effect semiconductor device and forming met

Details Insulated gate field effect semiconductor device and forming met Insulated gate field effect semiconductor device and forming met

1996-02-09

1997-04-22

Levy, Stuart S.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257366, 257270, H01L 2348, H01L 2352, H01L 2940, H01L 2976

Patent

active

056231652

ABSTRACT:
In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is in contact with a gate insulating film and is contained at a high concentration in the second semiconductor layer which is not in contact with the gate insulating film. Accordingly, By existence of the first semiconductor layer is which the impurity is not doped, the impurity is prevented from penetrating through the gate insulating film from the gate electrode and diffusing into the channel forming region. Also, by existence of the second semiconductor layer in which high concentration impurity is doped, the gate electrode has low resistance.

REFERENCES:
patent: 5021849 (1991-06-01), Pfiester et al.
patent: 5237196 (1993-08-01), Mikata et al.

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