Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-04-25
1998-04-28
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
357 58, 357 62, 357 66, H01L 2904, H01L 2976
Patent
active
057448183
ABSTRACT:
A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diameter of 30 .ANG. to 4 .mu.m as viewed from the upper surface of said semiconductor film and contains oxygen impurity and concentration of said oxygen impurity is not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 at an inside position of said semiconductor film. Also is disclosed a method for fabricating semiconductor devices mentioned hereinbefore, which comprises depositing an amorphous semiconductor film containing oxygen impurity at a concentration not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 by sputtering from a semiconductor target containing oxygen impurity at a concentration not higher than 5.times.10.sup.18 atoms.multidot.cm.sup.-3 in an atmosphere comprising hydrogen at not less than 10% in terms of partial pressure; and crystallizing said amorphous semiconductor film at a temperature of from 450.degree. C. to 700.degree. C.
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Yamazaki Shunpei
Zhang Hongyong
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