Insulated gate enhancement mode field effect transistor with sle

Details Insulated gate enhancement mode field effect transistor with sle Insulated gate enhancement mode field effect transistor with sle

1991-08-28

1992-10-20

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330294, 330302, H03F 316

Patent

active

051573512

ABSTRACT:
Voltage slew-rate control for inductive load connected to the drain of an insulated gate enhancement mode field effect transistor is disclosed. The voltage slew-rate control is accomplished by incorporating a current integrator between the gate and drain of the field effect transistor, thereby effectively annihilating the capacitance of the field effect transistor which has heretofore proven to be generally responsible for instability and oscillations when slew-rate control is attempted in such a circuit. The current integrator includes a capacitor and a current source in circuit with a high speed unity gain buffer amplifier. The buffer amplifier preferably has a low impedance through the frequencies of interest to prevent the natural resonances of stray capacitances with the inductive load.

REFERENCES:
patent: 4134076 (1979-01-01), Suzuki et al.
patent: 5015968 (1991-05-01), Podell et al.

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