Insulated gate-controlled thyristor having shorted anode

Details Insulated gate-controlled thyristor having shorted anode Insulated gate-controlled thyristor having shorted anode

1984-11-02

1987-01-13

Larkins, William D.

357 43, 357 56, 357 86, H01L 2972, H01L 2978, H01L 2908, H01L 2906

Patent

active

046368302

ABSTRACT:
A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off. The anode region of the device is electrically shorted to its contiguous N-type region.

REFERENCES:
patent: 3239728 (1966-03-01), Aldrich et al.

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