Insulated gate-controlled thyristor

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Details

357 43, 357 56, H01L 2972, H01L 2706, H01L 2908, H01L 2906

Patent

active

046300929

ABSTRACT:
A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off.

REFERENCES:
Russell et al., "The COMFET-a New High Conductance MOS-Gated Device" IEEE Electron Device Letters, vol. EDL-4, No. 3, Mar. 1983, pp. 63-65.

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