Insulated-gate controlled semiconductor device

Details Insulated-gate controlled semiconductor device Insulated-gate controlled semiconductor device

1993-01-07

1998-12-01

Leja, Ronald W.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Impedance insertion

361 18, H02H 900

Patent

active

058447601

ABSTRACT:
An insulated-gate controlled semiconductor device includes a main circuit that is controlled by an insulated gate having a gate resistor, an overload detector having the insulated gate for use in common with the main circuit, the overload detector being of the same construction as that of the main circuit, a current detector for detecting current passing through the overload detector, and a field effect transistor having a gate which responds to the voltage drop across the current detector. The main circuit is protected by lowering the voltage applied to the insulated gate through the gate resistor and through the low on-resistance of the field effect transistor while the field effect transistor is held on.

REFERENCES:
patent: 4719531 (1988-01-01), Okado et al.
patent: 4893158 (1990-01-01), Mihara et al.
patent: 4937471 (1990-06-01), Park et al.
patent: 5027252 (1991-06-01), Yamamura
patent: 5303110 (1994-04-01), Kumagai

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