Insulated gate control static induction thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

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257120, 257124, 257125, 257130, 257131, 257135, 257143, 257144, 257152, 257273, 257283, H01L 2974, H01L 29747

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054263140

ABSTRACT:
A static induction thyristor has a first semiconductor area having a high impurity concentration of a first conductivity type. A second semiconductor area having low impurity concentration is formed adjacent to the first semiconductor area. A third semiconductor area having a high impurity concentration of a second conductivity type which is the conductivity type opposite to the first conductivity type is formed on a part of a surface of the second semiconductor area so located as to form a fourth semiconductor area located within the third semiconductor area. A fifth semiconductor area having a high impurity concentration of the first conductivity type is formed on the part of the surface of the second semiconductor area in spaced relation to the forth semiconductor area. An insulating film formed to cover at least a portion of a surface of the fifth semiconductor area and a least a portion of the surface of the second semiconductor area, which is put between the forth semiconductor area and the fifth semiconductor area. An insulated-gate control electrode is formed on the insulating film. The first and third semiconductor areas serve as a first and second main electrode areas, respectively.

REFERENCES:
patent: 4717940 (1988-01-01), Shinohe et al.
patent: 4816892 (1989-03-01), Temple
patent: 4914496 (1990-04-01), Nakagawa et al.
patent: 4935798 (1990-06-01), Nishizawa et al.
patent: 4963972 (1990-10-01), Shinohe et al.
patent: 4969027 (1990-11-01), Baliga et al.
patent: 5155569 (1992-10-01), Terashima
"SI Thyristors hold promise for long distance DC power transmission", Jun-ichi Nishizawa, PCI & Motor-Con 88 Jun. 6-8, 1988, Munich, West Germany.
Third SI Device Symposium Lecture Theses, 1989, Jun-ichi Nishizawa et al.
"A Double-Gate-Type Static-Induction Thyristor", Jun-ichi Nishizawa et al., IEEE Transactions on Electron Devices, vol. ED-34, No. 6, Jun. 1987.

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