Insulated gate bipolar transistor with a shortened carrier lifet

Details Insulated gate bipolar transistor with a shortened carrier lifet Insulated gate bipolar transistor with a shortened carrier lifet

1990-09-10

1992-06-23

Hille, Rolf

Fishing, trapping, and vermin destroying

357 38, 357 39, 357 234, 357 233, 357 231, 437247, 437173, H01L 2900, H01L 2974, H01L 29747, H01L 2910

Patent

active

051247720

ABSTRACT:
In a power semiconductor device such as an IGBT, a fifth region of n conductivity type is provided. The fifth region is formed in a portion of a second region (drain region) contacting an insulating layer below the gate layer. The fifth region contacts a third region (base region) and has an impurity concentration higher than that of the second region. Therefore, even when a carrier life time is sufficiently short, an electron distribution density can be kept high in the entire fifth region and the second region under the third region (base region) near the fifth region, and the localization of a hole current is moderated (in a case of a p-type base and an n-type drain). As a result, a maximum controllable current is increased, and a wide safe operation area can be obtained.

REFERENCES:
patent: 4925812 (1990-05-01), Gould
patent: 5017508 (1991-05-01), Dodt et al.
Sakurai et al., "600 V and 1200 V MOS-Gate Bipolar Transistor (MBT) Module for High Frequency PWM Inverter", PCIM 88 Proceeding.
Baliga, "Switching Speed Enhancement in Insulated Gate Transistors by Electron Irradiation, Jayant Baliga," IEEE Transactions on Electron Devices, vol. Ed-31, No. 12, pp. 1790-1796, Dec. 1984.
Goodman et al., "Improved COMFETs with Fast Switching Speed and High-Current Capability," International Electron Devices Meeting, IEEE, 1983.

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