Insulated gate bipolar transistor power module

Details Insulated gate bipolar transistor power module Insulated gate bipolar transistor power module

1989-11-16

1990-10-23

Beha, Jr., William H.

Electric power conversion systems

Current conversion

Including automatic or integral protection means

357 81, 361388, 363132, 363141, H02M 75387

Patent

active

049657100

ABSTRACT:
A power module contains IGBT die along with integrated circuit driver chips and opto isolators or isolation transformers within the same module housing. Output terminals are provided which can be interfaced directly to control logic or microprocessors for operating the module. The IGBTs may have current-sensing electrodes to simplify current measurement and control functions.

REFERENCES:
patent: 4458305 (1984-07-01), Buckle et al.
patent: 4556899 (1985-12-01), Kurihara et al.
patent: 4777578 (1988-10-01), Jahns
patent: 4796145 (1989-01-01), Oshikiri
patent: 4816984 (1989-03-01), Porst et al.
Sean Young, "High-Speed, High-Voltage IC Driver for HEXFET or IGBT Bridge Circuits", 1988, International Rectifier Power MOSFET Application Notes, AN-978, pp. 1-8.

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