Insulated gate bipolar transistor (IGBT) with monolithic...

Details Insulated gate bipolar transistor (IGBT) with monolithic... Insulated gate bipolar transistor (IGBT) with monolithic...

2009-06-04

2011-11-15

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S139000, C257S365000, C257SE29197, C257SE29201

Reexamination Certificate

active

08058670

ABSTRACT:
A trench insulation gate bipolar transistor (IGBT) power device with a monolithic deep body clamp diode comprising a plurality of trench gates surrounded by emitter regions of a first conductivity type near a top surface of a semiconductor substrate of the first conductivity type encompassed in base regions of a second conductivity type. A collector region of the second conductivity type is disposed on a rear side opposite from the top surface of the semiconductor substrate corresponding to and underneath the trench gates surrounded by the emitter regions encompassed in the base regions constituting a plurality of insulation gate bipolar transistors (IGBTs). A deep dopant region of the second conductivity type having P-N junction depth deeper than the base region is disposed between and extending below the trench gates in the base region of the first conductivity type.

REFERENCES:
patent: 5702961 (1997-12-01), Park
patent: 7238568 (2007-07-01), Williams et al.
patent: 2007/0114599 (2007-05-01), Hshieh

Affiliated with

Also associated with

Rating

Insulated gate bipolar transistor (IGBT) with monolithic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate bipolar transistor (IGBT) with monolithic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate bipolar transistor (IGBT) with monolithic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4253855