Insulated-gate bipolar transistor (IGBT)

Details Insulated-gate bipolar transistor (IGBT) Insulated-gate bipolar transistor (IGBT)

2011-05-24

2011-05-24

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S132000, C257S137000

Reexamination Certificate

active

07948005

ABSTRACT:
A fourth semiconductor region of a first conduction type is provided in a partial region of a third semiconductor region of a second conduction type. This configuration enhances the blocking voltage at the time when the sheet carrier concentration of a fifth semiconductor region is enhanced.

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Office Action issued on Dec. 23, 2009 in German counterpart application. (English translation of Office Action).

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