Insulated gate bipolar transistor having high short-circuit SOA

Details Insulated gate bipolar transistor having high short-circuit SOA Insulated gate bipolar transistor having high short-circuit SOA

1991-01-31

1992-12-08

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

H01L 2702

Patent

active

051702398

ABSTRACT:
An IGBT has an emitter bypass structure. The interval D between N emitter regions is adapted to be larger than two times of a channel length L in order to effectively decrease a channel width to effectively decrease a saturation current. A high concentration region may be provided in a P base region, which is closer to the end portion of the P base region than the emitter regions between the emitter regions, so that the channel width can be effectively decreased even without the relation of D>2L. A channel width per unit area W.sub.U may be in a range of 140 cm.sup.-1 .ltoreq.W.sub.U .ltoreq.280 cm.sup.-1 in an IGBT of a breakdown voltage class of 500-750 V or 70 cm.sup.-1 .ltoreq.W.sub.U .ltoreq.150 cm.sup.-1 in an IGBT of a breakdown voltage class of 1000-1500 V, so that an IGBT having a short-circuit withstandability and a latch-up withstandability suitable for an inverter can be implemented.

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