Insulated gate bipolar transistor having high breakdown voltage

Details Insulated gate bipolar transistor having high breakdown voltage Insulated gate bipolar transistor having high breakdown voltage

1992-08-11

1994-07-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257138, 257378, 257487, H01L 2974, H01L 31111, H01L 2976, H01L 2358

Patent

active

053311841

ABSTRACT:
An insulated gate bipolar transistor having a low on-voltage and a low turn-off time is provided. P-type anode layer having a low impurity concentration, preferably 1.times.10.sup.16 to 1.times.10.sup.1 7/cm.sup.3, is provided on an N-type drain layer that includes a pair of P-type base regions each having an N.sup.+ -type source region. A plurality of P.sup.+ -type anode regions are formed in the P-type anode layer.

REFERENCES:
patent: 4782379 (1988-11-01), Baliga
patent: 5023696 (1991-06-01), Ogino
patent: 5031009 (1991-07-01), Fujihira
IEEE, PESC 1989, Record vol. 1, pp. 21-24, Sep. 21, 1989, G. Miller, et al. "A New Concept for a Non Punch Through IGBT with MOSFET Like Switching Characteristics".

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