Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1990-02-22
1992-02-25
Callahan, Timothy P.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307572, 307575, 307544, 307270, 361 98, H03K 1708, H03K 1728
Patent
active
050916645
ABSTRACT:
A semiconductive device integrated on a single chip and adapted for self-protecting use in control applications, including an insulated gate bipolar transistor (IGBT) useful as a series controller for a load. In the event of a load failure (short), the upward current excursion is inhibited by a control arrangement in which a sensing resistor in the emitter circuit of the IGBT turns on a three-terminal signal shunt across the signal control path of the IGBT. The signal shunt includes a voltage dropping element such as a Zener diode and may also include Zener reverse-voltage protection. The sensing resistor may be placed in the low-current branch of a split-emitter current path of the IGBT. A pulsed constant-amplitude driving signal may be applied to the control signal path of the IGBT through serially-connected NPN and PNP bipolar transistors providing a common driving node connected through a serial impedance to the control signal path of the IGBT and to the signal shunt.
REFERENCES:
patent: 4581540 (1986-04-01), Guajardo
patent: 4721869 (1988-01-01), Okado
patent: 4841166 (1989-06-01), Harnden
Callahan Timothy P.
Fuji Electric & Co., Ltd.
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