Insulated gate bipolar transistor and method of manufacturing th

Details Insulated gate bipolar transistor and method of manufacturing th Insulated gate bipolar transistor and method of manufacturing th

1990-12-17

1992-01-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437149, 437150, 437152, 437 30, 437 41, 437 27, 437154, H01L 21265

Patent

active

050844016

ABSTRACT:
A P-type base region, which is formed on an N-type body layer, as a relatively deep first base region and a relatively shallow second base region. An N.sup.+ -type emitter region is formed on the base region. A portion of the surface of the second base region between surfaces of the emitter region and body layer is defined as a channel. A gate oxide film, on which a gate electrode is formed, is provided on the channel. The amount and depth of introduction of an impurity in the second base region is about 2.times.10.sup.14 to 5.times.10.sup.14 cm.sup.-2 and 4 to 10 .mu.m, respectively. The thickness of the gate oxide film is about 600 to 1000 .ANG.. Thus, an IGBT is implemented, which can ensure sufficient pulse energization ability while causing no latch-up in application to a stroboscope circuit.

REFERENCES:
patent: 4777149 (1988-10-01), Tanabe et al.
patent: 4810665 (1989-03-01), Chang et al.
patent: 4985743 (1991-01-01), Tokura et al.

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