Insulated gate bipolar transistor and method of manufacturing th

Details Insulated gate bipolar transistor and method of manufacturing th Insulated gate bipolar transistor and method of manufacturing th

1989-04-21

1991-02-05

Hille, Rolf

357 37, H01L 2910, H01L 2900

Patent

active

049909754

ABSTRACT:
A P-type base region, which is formed on an N-type body layer, has a relatively deep first base region and a relatively shallow second base region. An N.sup.+ -type emitter region is formed on the base region. A portion of the surface of the second base region between surfaces of the emitter region and body layer is defined as a channel. A gate oxide film, on which a gate electrode is formed, is provided on the channel. The amount and depth of introduction of an impurity in the second base region is about 2.times.10.sup.14 to 5.times.10.sup.14 cm.sup.-2 and 4 to 10 .mu.m, respectively. The thickness of the gate oxide film is about 600 to 1000 .ANG.. Thus, an IGBT is implemented, which can ensure sufficient pulse energization ability while causing no latch-up in application to a stroboscope circuit.

REFERENCES:
patent: 4364073 (1982-12-01), Becke et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4833513 (1989-05-01), Sasaki

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