Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2011-04-26
2011-04-26
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257SE29199, C257SE29197, C257SE21382, C257SE21383, C438S135000, C438S138000
Reexamination Certificate
active
07932538
ABSTRACT:
According to embodiments, an insulated gate bipolar transistor (IGBT) may include a first conductive type collector ion implantation area, formed within a substrate, second conductive type first buffer layers, formed over the collector ion implantation area and each including a first segment buffer layer and a second segment buffer layer, a first conductive type poly layer formed from a surface of the substrate to the collector ion implantation area, the first conductive type poly layer having a contact structure, a second buffer layer of the second conductive type, formed in the substrate area next to the first conductive type poly layer. According to embodiments, a segment buffer layer may have different concentrations according areas. Accordingly, amounts of hole currents injected through the buffer layers may differ according to areas.
REFERENCES:
patent: 2009/0057710 (2009-03-01), Lee
Dongbu Hi-Tek Co., Ltd.
Mandala Victor
Moore Whitney
Sherr & Vaughn, PLLC
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