Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2011-08-16
2011-08-16
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S147000, C257S152000, C257SE21382, C438S135000, C438S141000
Reexamination Certificate
active
07999285
ABSTRACT:
An insulated gate bipolar transistor according to an embodiment includes a first conductive type collector ion implantation area in a substrate; a second conductive type buffer layer, including a first segment buffer layer and a second segment buffer layer, on the first conductive collector ion implantation area; a first conductive type base area on the second conductive type buffer layer; a gate on the substrate at a side of the first conductive type base area; a second conductive type emitter ion implantation area in the first conductive type base area; an insulating layer on the gate; an emitter electrode electrically connected to the second conductive type emitter ion implantation area; and a collector electrode electrically connected to the first conductive collector ion implantation area. The first segment buffer layer can be aligned below a portion of the base area and can have a lower density of second conductive type ions than that of the second segment buffer layer adjacent the first segment buffer layer.
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Dongby Hitek Co., Ltd.
Nguyen Thinh T
Saliwanchik Lloyd & Eisenschenk
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