Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-10-17
1998-02-17
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257490, 257494, H01L 2974, H01L 2358
Patent
active
057194122
ABSTRACT:
The insulated gate bipolar transistor (IGBT) integrates the anti-excess voltage protection function and a drain voltage fixing function. When a voltage is applied across the drain electrode and the source electrode of the IGBT, a depletion zone propagates from a p-n junction between a p base layer and a n.sup.- drain layer toward inside of the n.sup.- drain layer. A critical electric field is also established, causing generation of a great number of electron-hole pairs due to impact ionization of carriers in or near the n.sup.- drain layer. Conduction exist between the drain electrode and the source electrode, at an applied voltage lower than a drain-source voltage at which the depletion region reaches a p.sup.+ drain layer through the n.sup.- drain layer, the applied voltage being equal to or lower than a critical voltage that causes generation of a great number of electron-hole pairs due to impact ionization of carriers in or near the n.sup.- drain layer below a p-n junction between a p-type guard ring and the n.sup.- drain layer.
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Muller et al. "Device Electronics for IC's," p. 204, 1986
Laska et al. "A 2000 V Non-Punchthrough IGBT with High Ruggedness", Solid-State Electronics vol. 35, No. 5, pp. 681-685 no date.
Kato Naohito
Okabe Naoto
Fahmy Wael
Nippondenso Co., Ltd
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