Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-04-17
1994-07-05
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257140, 257142, H01L 29740, H01L 29747
Patent
active
053269934
ABSTRACT:
An insulated gate bipolar transistor employs a semiconductor substrate constructed by putting a high impurity density area, a low impurity density and a conductivity modulation area, respectively, of an n type on one another sequentially on a substrate of a p type, serving as a drain area. A gate is disposed on a gate oxide film deposited on the conductivity modulation area. A channel forming layer of a p type and a source layer of an n type are diffused from windows of the gate in such a manner that the peripheral edges of these layers creep under the gate, and a drain terminal, a source terminal, and on/off controlling gate terminal extend from the drain area, the channel forming layer and source layer, and the gate, respectively.
Fuji Electric & Co., Ltd.
Hardy David B.
Hille Rolf
LandOfFree
Insulated gate bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulated gate bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate bipolar transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-797708