Insulated gate bipolar transistor

Details Insulated gate bipolar transistor Insulated gate bipolar transistor

2007-06-15

2010-10-26

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S370000

Reexamination Certificate

active

07821043

ABSTRACT:
An insulated gate bipolar transistor has a p-type emitter layer; an n-type buffer layer provided on the p-type emitter layer; an n-type base layer provided on the n-type buffer layer and having a higher resistivity than the n-type buffer layer; a p-type base layer provided in part of an upper surface of the n-type base layer; an n-type source layer provided in part of an upper surface of the p-type base layer; a trench extending through the n-type source layer and the p-type base layer to the n-type base layer; a gate electrode provided in the trench; and a gate insulating film provided between the gate electrode and an inner surface of the trench. The p-type emitter layer has a thickness of 5 to 50 μm and a dopant concentration of 2×1016to 1×1018cm−3.

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patent: 2002-305305 (2002-10-01), None

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