Insulated gate bipolar transistor

Details Insulated gate bipolar transistor Insulated gate bipolar transistor

2007-07-31

2007-07-31

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257SE29027

Reexamination Certificate

active

10109838

ABSTRACT:
An IGBT includes a plurality of n+doped regions (11) selectively formed in a main surface (103) of a p+semiconductor layer (12) opposite from an n type semiconductor layer (80) without being connected to the n type semiconductor layer (80). The n+doped regions (11) are formed in corresponding relation to and only under channel regions (CH1a-CH1d) of structures (200a-200d), respectively. This lowers the effective concentration of the p+semiconductor layer (12) on the n+doped regions (11) to reduce the number of holes injected from a collector layer (9) in an off state, reducing a leakage current.

REFERENCES:
patent: 4980743 (1990-12-01), Nakagawa et al.
patent: 5289019 (1994-02-01), Terashima
patent: 5372954 (1994-12-01), Terashima
patent: 5589408 (1996-12-01), Robb et al.
patent: 6111290 (2000-08-01), Uenishi et al.
patent: 41 12 905 (1991-10-01), None
patent: 197 31 495 (1999-01-01), None
patent: 64-80077 (1989-03-01), None
patent: 3-184565 (1991-08-01), None
patent: 5-90593 (1993-04-01), None
patent: 05152574 (1993-06-01), None
patent: 6-69509 (1994-03-01), None

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