Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With means to control triggering
Reexamination Certificate
2006-08-29
2006-08-29
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With means to control triggering
C257S173000, C257S355000, C257S356000
Reexamination Certificate
active
07098488
ABSTRACT:
An IGBT having a trench gate structure is disclosed which generates decreased noise at switching and displays superiority in saturation voltage to turn-off loss characteristics (trade-off characteristics). In a part of a region on an emitter side surface interposed between trench gates, a sub well region is provided, which is connected to an emitter electrode through diodes. When the IGBT is in a turned-on state, the diodes are brought into a non-conduction state to isolate the sub well region from the emitter electrode, by which carriers are accumulated. When the IGBT is in a turned-off state, the diodes are brought into a conduction state to electrically connect the sub well region to the emitter electrode, by which carriers are discharged at a high speed. In an early stage of turning-on of the IGBT, capacitance of a portion of the gate facing the sub well region is converted to gate-emitter capacitance to thereby reduce gate-collector capacitance, by which electromagnetic noise at switching is reduced.
REFERENCES:
patent: 5266831 (1993-11-01), Phipps et al.
patent: 5502338 (1996-03-01), Suda et al.
patent: 5973359 (1999-10-01), Kobayashi et al.
patent: 6111290 (2000-08-01), Uenishi et al.
patent: 6114727 (2000-09-01), Ogura et al.
patent: 6188109 (2001-02-01), Takahashi
patent: 6246092 (2001-06-01), Fujihira et al.
patent: 6580121 (2003-06-01), Hisamoto
patent: 6737705 (2004-05-01), Momota et al.
patent: 6762440 (2004-07-01), Pairitsch et al.
patent: 6762461 (2004-07-01), Kawamoto
patent: 6912153 (2005-06-01), Tihanyi
patent: 2002/0050603 (2002-05-01), Kawamoto
patent: 2-102579 (1990-04-01), None
patent: 5-175491 (1993-07-01), None
patent: 5-243561 (1993-09-01), None
patent: 8-505008 (1996-05-01), None
patent: 2000-183340 (2000-06-01), None
patent: 2001-308327 (2001-11-01), None
patent: 3325424 (2002-07-01), None
Kanemaru Hiroshi
Ueno Katsunori
Yoshikawa Koh
Díaz José R.
Fuji Electric Holdings Co., Ltd.
Parker Kenneth
Rossi Kimms & McDowell LLP
LandOfFree
Insulated gate bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulated gate bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate bipolar transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3639089