Insulated gate bipolar transistor

Details Insulated gate bipolar transistor Insulated gate bipolar transistor

1994-08-15

1996-01-16

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257140, 257146, 257141, H01L 2974, H01L 31111

Patent

active

054850231

ABSTRACT:
In a collector side portion of an insulated gate bipolar transistor, there are provided, for example, a p-type collector layer diffused into an n-type semiconductor region, an n-type carrier extraction layer diffused into the semiconductor region opposite to an emitter side portion and a field effect transistor portion having an auxiliary gate disposed between the collector layer and the carrier extraction layer. The field effect transistor portion is controlled by the auxiliary gate in such a manner that during its "off" state the collector layer is separated from the carrier extraction layer connected to a collector terminal to cause its potential to float so that the majority carriers flowing in a transverse direction below the collector layer prevent minority carriers from being injected from the collector layer into the semiconductor region, thereby shortening the "off" operation time.

REFERENCES:
patent: 4811072 (1989-03-01), Risberg
Application of General Purpose Power BiMOS Simulator TONADDEII to Double Gate Lateral Bipolar-Mode MOSFET Design, Nakagawa et al., Proceedings of 1988 International Symposium on Power Semiconductor Devices, pp. 42-47, Tokyo.

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