Insulated gate bipolar transistor

Details Insulated gate bipolar transistor Insulated gate bipolar transistor

2011-07-05

2011-07-05

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Including additional component in same, non-isolated structure

C257S124000, C257S288000, C257S370000, C257S587000, C257S712000

Reexamination Certificate

active

07973387

ABSTRACT:
An insulated gate bipolar transistor includes bump pad connectors to provide thermal contact with a heat spreader for dissipating heat away form the insulated gate bipolar transistor.

REFERENCES:
patent: 2002/0023341 (2002-02-01), Lorenz et al.
patent: 2003/0106924 (2003-06-01), Nobori et al.
patent: 2005/0146027 (2005-07-01), Kondou et al.
patent: 2007/0057284 (2007-03-01), Casey et al.
patent: 2007/0215903 (2007-09-01), Sakamoto et al.
patent: 1005083 (2000-05-01), None
patent: 2786657 (2000-06-01), None
patent: 2814907 (2002-04-01), None
Gillot C et al., “Double-Sided Cooling for High Power IGBT Modules Using Flip Chip Technology”, Industrial Applications Conference, 2000. Conference Record of the 2000 IEEE Oct. 8-12, 2000, Piscataway, NJ, USA, IEEE, vol. 5, Oct. 8, 2000, pp. 3016-3020, XP010521716.
International Search Report and Written Opinion mailed on Sep. 18, 2008.

Affiliated with

Also associated with

Rating

Insulated gate bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2641539