Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1993-11-12
2000-06-06
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257147, H01L 2974, H01L 31111
Patent
active
060721995
ABSTRACT:
A insulated gate bipolar transistor comprising a semiconductor substrate layer having an impurity concentration of not less than 4.0.times.10.sup.13 /cm.sup.3, and being substantially free of lifetime killers.
REFERENCES:
patent: 4782372 (1988-11-01), Nakagawa et al.
patent: 5031009 (1991-07-01), Fujihira
patent: 5237183 (1993-08-01), Fay et al.
Laska, et al., "A 2000 V-Non-Punch-Through-IGBT with Dynamical Properties Like a 1000 V-IGBT" International Electron Devices Meeting, Dec. 21, 1993.
Laska et al; "A 2000 V. non-punchthrough IGBT with dynamical properties like a 1000 v -IGBT" IEDM, Dec. 9, 1990.
Laska et al; "A 2000 v, non-punch through IGBT with dynamical properties like a 1000 v IGBT" IEDM, Dec. 9, 1990.
Fahmy Wael
Fuji Electric & Co., Ltd.
LandOfFree
Insulated gate bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Insulated gate bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate bipolar transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2215376