Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1989-04-25
1992-11-03
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257144, H01L 2910, H01L 2978
Patent
active
051609851
ABSTRACT:
An insulated gate bipolar transistor has a P-type well region which is partially formed in a surface of an N.sup.- -type epitaxial layer formd on a P.sup.+ -type semiconductor substrate. An N.sup.+ -type emitter region is partially formed in a surface of the well region. A buried emitter electrode is provided in a boundary portion between the well and the emitter region. The buried emitter electrode is electrically connected with a emitter electrode formed on the emitter region through a conductor layer formed in the emitter region. Thus, a parasitic working area of a parasitic transistor formed by the epitaxial layer, well region and emitter region is extremely reduced to effectively prevent a latch-up. Further, the effective area of the emitter electrode is increased to increase current capacity.
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patent: 4803532 (1989-02-01), Mihara
Mesotaxy: Single-crystal growth of buried CoSi.sub.2 layers, Alice E. White et al AT & T Bell Laboratories, Murray Hill, N.J., Appl. Phys. Lett 50(2) Jan. 12, 1987.
Applications of Simox Technology to CMOS LSI and Radiation-Hardened Devices Nuclear Instruments and Methods in Physics Research B21 (1987) 124-128 North-Holland, Amsterdam.
TiSi.sub.2 and TiN Formation by Ti-Ion Implantation and Their Application to MOS Devices, Yasuhisa Omura et al, NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, 243-01, Japan.
Dang Hung Xuan
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
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