Insulated gate bipolar transistor

Details Insulated gate bipolar transistor Insulated gate bipolar transistor

1988-07-19

1991-01-15

Hille, Rolf

357 234, 357 34, 357 51, H01L 29747, H01L 2910, H01L 2978, H01L 2972

Patent

active

049857436

ABSTRACT:
This invention is basically related to an insulated gate bipolar transistor comprising a first conductivity type semiconductor substrate, a second conductivity type semiconductor layer formed on the substrate and having a low concentration of impurities, a first conductivity type base layer formed on a surface of the semiconductor layer, a second conductivity type source layer formed on the surface of the base layer and having a channel region at at least one end thereof, a gate electrode, a source electrode and a drain electrode, and is characterized in that a voltage dropping portion is provided either inside the source layer or between the source layer and the source electrode. Accordingly an insulated gate bipolar semiconductor transistor having this configuration can prevent a latch up phenomenon caused by a voltage drop in a source layer.

REFERENCES:
patent: 4364073 (1982-12-01), Becke et al.
patent: 4406051 (1983-09-01), Iizuka
patent: 4495513 (1985-01-01), Descamps
"NIKKEI Electronics", May 19, 1986, No. 395, p. 183.

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