Instantaneous synthesis of refractory nitrides from solid precur

Chemistry of inorganic compounds – Nitrogen or compound thereof – Binary compound

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C01B 2106

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060962828

ABSTRACT:
A process for forming high quality crystalline refractory materials, particularly gallium (III) nitride (GaN), from solid precursors. By blending dry reactants, including NH.sub.4 Cl, in an oxygen and moisture free environment, placing the reactants in a reaction vessel and in an inert environment, rapidly exposing the reactants to a temperature in excess of about 225.degree. C. The soluble salt by-products are then extracted from the resultant mixture, leaving high purity crystals of the nitride in the form of a fine powder.

REFERENCES:
patent: 5453407 (1995-09-01), Chung et al.

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