Chemistry of inorganic compounds – Nitrogen or compound thereof – Binary compound
Patent
1998-04-23
2000-08-01
Langel, Wayne
Chemistry of inorganic compounds
Nitrogen or compound thereof
Binary compound
C01B 2106
Patent
active
060962828
ABSTRACT:
A process for forming high quality crystalline refractory materials, particularly gallium (III) nitride (GaN), from solid precursors. By blending dry reactants, including NH.sub.4 Cl, in an oxygen and moisture free environment, placing the reactants in a reaction vessel and in an inert environment, rapidly exposing the reactants to a temperature in excess of about 225.degree. C. The soluble salt by-products are then extracted from the resultant mixture, leaving high purity crystals of the nitride in the form of a fine powder.
REFERENCES:
patent: 5453407 (1995-09-01), Chung et al.
Kaner Richard B.
Reynolds Thomas K.
Wallace Charles H.
Langel Wayne
Ram Michael J.
The Regents of the University of California
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