Installation for depositing thin layers in the reactive vapor ph

Details Installation for depositing thin layers in the reactive vapor ph Installation for depositing thin layers in the reactive vapor ph

1982-09-22

1984-03-06

Smith, John D.

Coating apparatus

Gas or vapor deposition

With treating means

118725, 118729, 118 501, 427 38, C23C 1308

Patent

active

044347421

ABSTRACT:
Installation for the deposition of thin layers in the reactive vapor phase by plasma.
The installation comprises a coaxial conductor, whose core is hollow and is used for introducing gas into a chamber having a row of openings. The conductor is also used for introducing the high frequency field necessary for exciting the gas. A substrate or sample holder moves beneath the row of openings.
Application to the deposition of thin layers with a large surface.

REFERENCES:
patent: 3282243 (1966-11-01), Phillips, Jr. et al.
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4151034 (1979-04-01), Yamamoto et al.
patent: 4160690 (1979-07-01), Shibagaki et al.
patent: 4292342 (1981-09-01), Sarma et al.
Sarma, "Plasma Deposited Polycrystalline Silicon Films," Solid State Technology, vol. 4, Apr. 1980, pp. 143-146.

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