Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2005-02-22
2005-02-22
Zarneke, David (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S1540PB
Reexamination Certificate
active
06859060
ABSTRACT:
An inspection technique for enabling an inspection on a wafer at an early stage during a wafer process. A wafer in a process is irradiated with an electron beam a plurality of times at predetermined intervals under a condition that a junction is backward biased, and secondary electron signals are monitored, so as to evaluate relax time characteristic of a backward bias potential in a p-n junction. Since the potential in the p-n junction decreases according to the intensity of a backward bias current in intermittent time, a backward bias current can be specified from an intensity signal interrelated with the number of secondary electron signals, that is, a potential contrast image on the basis of image information.
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Neo Yoichiro
Nozoe Mari
Hollington Jermele
Zarneke David
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