Inspection method and apparatus of laser crystallized silicons

Details Inspection method and apparatus of laser crystallized silicons Inspection method and apparatus of laser crystallized silicons

2007-02-27

2007-02-27

Evans, F. L. (Department: 2877)

Optics: measuring and testing

Crystal or gem examination

C356S072000, C356S237100, C438S016000

Reexamination Certificate

active

10792833

ABSTRACT:
An inspection method and apparatus of laser crystallized silicons in the low-temperature poly Si (LTPS) process. The crystalline quality is inspected by using a visible light source to irradiate the surface of the poly Si and examining the variations of the reflected light caused by the protrusion arrangement at the surface of the poly Si. This method can be adopted on the poly Si samples prepared by the line scanning of the excimer laser annealing (ELA) technology.

REFERENCES:
patent: 6798498 (2004-09-01), Wada et al.
patent: 2003/0017658 (2003-01-01), Nishitani et al.
patent: 536622 (1991-01-01), None
patent: WO 01/61734 (2001-08-01), None

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