Insitu hardmask and metal etch in a single etcher

Details Insitu hardmask and metal etch in a single etcher Insitu hardmask and metal etch in a single etcher

1999-01-22

2000-12-12

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438742, H01L 2100

Patent

active

061598631

ABSTRACT:
A method of manufacturing a semiconductor wafer wherein a layer of hardmask material is formed on the surface of a metal layer formed on a layer of interlayer dielectric formed on a semiconductor substrate on and in which active devices have been formed. A layer of photoresist is formed on the surface of the layer of hardmask material, patterned and developed exposing portions of the underlying layer of hardmask material. The semiconductor wafer is placed in an etched and the layer of hardmask material is etched in a first process utilizing a combination fluorine and chlorine chemistry and the metal layer is etched in a second process utilizing a combination fluorine and chlorine chemistry.

REFERENCES:
patent: 5369053 (1994-11-01), Fang
patent: 5605601 (1997-02-01), Kawasaki
patent: 5665641 (1997-09-01), Shen et al.
patent: 5772903 (1998-06-01), Abraham
patent: 5981398 (1999-11-01), Tsai et al.
patent: 6017826 (2000-01-01), Zhou et al.

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