Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Patent
1992-12-21
1993-11-16
McFarlane, Anthony
Chemistry of inorganic compounds
Silicon or compound thereof
Oxygen containing
4233282, 502 64, 502 79, 502 85, C01B 3326
Patent
active
052621413
ABSTRACT:
Silicon is inserted into the crystal lattice of zeolites containing defect sites by reaction with SiCl.sub.4 in the presence of oxygen. It has been found that by initially dehydrating the starting zeolite and removing the hydroxyl groups existing in the crystal defect sites, the generation of HCl from the SiCl.sub.4 reagent is avoided along with the undesirable aluminum hydrolysis reactions between the HCl thus-generated and the zeolite framework. The prior dehydration and dehydroxylation makes the presence of oxygen essential to the silicon insertion.
REFERENCES:
patent: 4305845 (1981-12-01), Tu
patent: 4503023 (1985-03-01), Breck et al.
patent: 5098687 (1992-03-01), Skeels et al.
patent: 5100644 (1992-03-01), Skeels et al.
McBride Thomas K.
McFarlane Anthony
Miller Richard G.
UOP
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